NCP161(2015) Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

NCP161
(Rev.:2015)

450 mA, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits

ON Semiconductor 

NCP161

3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7

ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise

noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).

Parameter

Test Conditions

Symbol

Min

Typ

Max Unit

Operating Input Voltage

Output Voltage Accuracy

Line Regulation

Load Regulation

Dropout Voltage (Note 5)

Output Current Limit

Short Circuit Current

Quiescent Current

Shutdown Current

EN Pin Threshold Voltage

EN Pull Down Current

Turn−On Time

Power Supply Rejection Ratio

VIN = VOUT(NOM) + 1 V

0 mA ≤ IOUT ≤ 450 mA

VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V

IOUT = 1 mA to 450 mA

IOUT = 450 mA

VOUT(NOM) = 1.8 V

VOUT(NOM) = 2.5 V

VOUT(NOM) = 2.8 V

VOUT(NOM) = 2.85 V

VOUT(NOM) = 3.0 V

VOUT(NOM) = 3.3 V

VOUT(NOM) = 3.5 V

VOUT(NOM) = 4.5 V

VOUT(NOM) = 5.0 V

VOUT(NOM) = 5.14 V

VOUT = 90% VOUT(NOM)

VOUT = 0 V

IOUT = 0 mA

VEN ≤ 0.4 V, VIN = 4.8 V

EN Input Voltage “H”

EN Input Voltage “L”

VEN = 4.8 V

COUT = 1 mF, From assertion of VEN to

VOUT = 95% VOUT(NOM)

IOUT = 20 mA

f = 100 Hz

f = 1 kHz

f = 10 kHz

f = 100 kHz

VIN

VOUT

LineReg

LoadReg

VDO

ICL

ISC

IQ

IDIS

VENH

VENL

IEN

PSRR

1.9

5.5

V

−2

+2

%

0.02

%/V

0.001

%/mA

300

450

190

315

175

290

170

290

165

275

mV

150

260

150

255

120

210

105

190

105

185

450

700

mA

690

18

23

mA

0.01

1

mA

1.2

V

0.4

0.2

0.5

mA

120

ms

91

98

82

dB

48

Output Voltage Noise

f = 10 Hz to 100 kHz

IOUT = 1 mA

IOUT = 250 mA

VN

14

10

mVRMS

Thermal Shutdown Threshold

Temperature rising

TSDH

160

°C

Temperature falling

TSDL

140

°C

Active output discharge resistance

VEN < 0.4 V, Version A only

RDIS

280

W

Line transient (Note 6)

VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +

1.6 V) in 30 ms, IOUT = 1 mA

−1

VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +

TranLINE

1 V) in 30 ms, IOUT = 1 mA

mV

+1

Load transient (Note 6)

IOUT = 1 mA to 450 mA in 10 ms

IOUT = 450 mA to 1mA in 10 ms

−40

TranLOAD

mV

+40

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.

Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.

5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).

6. Guaranteed by design.

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