BYC8B-600 Ver la hoja de datos (PDF) - WeEn Semiconductors
Número de pieza
componentes Descripción
Fabricante
BYC8B-600 Datasheet PDF : 8 Pages
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WeEn Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC8B-600
I
F
dI
F
dt
t
rr
time
20 Forward current, IF (A)
Tj = 25 C
Tj = 150 C
15
typ
max
10
BYC8-600
Q
s
I
R
I
rrm
10% 100%
Fig.9. Definition of reverse recovery parameters trr, Irrm
5
0
0
1
2
3
4
Forward voltage, VF (V)
Fig.12. Typical and maximum forward characteristic
IF = f(VF); Tj = 25˚C and 150˚C.
Peak forward recovery voltage, Vfr (V)
20
Tj = 25 C
IF = 10 A
15
10
BYC8-600
typ
5
0
0
50
100
150
200
Rate of change of current, dIF/dt (A/ s)
Fig.10. Typical forward recovery voltage, Vfr as a
function of rate of change of current dIF/dt.
100mA Reverse leakage current (A)
BYC8-600
10mA
1mA
100uA
10uA
Tj = 125 C
100 C
75 C
50 C
25 C
1uA
0
100
200
300
400
500
600
Reverse voltage (V)
Fig.13. Typical reverse leakage current as a function
of reverse voltage. IR = f(VR); parameter Tj
IF
time
VF
V fr
VF
time
Fig.11. Definition of forward recovery voltage Vfr
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
T
t
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYC8
Fig.14. Maximum thermal impedance Zth j-mb as a
function of pulse width.
March 2001
4
Rev 1.500
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