BD243C Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BD243C Datasheet PDF : 2 Pages
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
1.92
°C/W
Max
62.5
°C/W
ELECTRICAL CHARACTERISTICS (tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICES Collector Cut-off
Current (VBE = 0)
VCE = rated VCEO
ICEO Collector Cut-off
Current (Is = 0)
VCE = 60 V
IEBO Emitter Cut-off Current VEB = 5 V
dc = 0)
VcEO(sus)* Collector-Emitter
Ic = 30 mA
Sustaining Voltage
for BD243B/BD244B
80
(lB-0)
for BD243C/BD244C
100
VcE(sat)* Collector-Emitter
Saturation Voltage
lo = 6 A
IB= 1 A
VBE* Base-Emitter Voltage Ic = 6 A
VCE = 4 V
hpE* DC Current Gain
Ic = 0.3 A VCE = 4 V
30
Ic = 3 A
VCE = 4 V
15
hfe Small Signal Current lc = 0.5A
Gain
lc = 0.5A
• Pulsed: Pulse duration = 300 us, duty cycle s 2 %
For PNP types voltage and current values are negative.
VCE = 10V f=1MHz 3
VCE= 10 V f = 1KHz 20
Max.
0.4
0.7
1
1.5
2
Unit
mA
mA
mA
V
V
V
V
DIM.
A
C
D
01
E
F
F1
F2
G
Q1
H2
L2
L4
L5
L6
17
L9
DM.
MIN.
4.40
1 23
2.40
0.49
0.81
1.14
1.14
495
2.4
10.0
13.0
2.85
15.25
62
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
038
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.8
3.93
3.85
MIN.
0.173
0.046
0.094
0.019
0024
0.044
0.044
0.194
0094
0.393
0.511
0.104
0600
0.244
0.137
0.147
Inch
TYP,
0050
0.645
n
MAX.
0.181
0.051
0.107
0.027
0034
0.087
0.087
0.203
0.108
0.409
0.551
0.116
0.620
0.280
0.154
0.151
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