BD243C Ver la hoja de datos (PDF) - New Jersey Semiconductor

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BD243C

COMPLEMENTARY SILICON POWER TRANSISTORS

New Jersey Semiconductor 

tSsml-donductot ZPioducti,/Jnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 378-8960

BD243B/BD243C

BD244B/BD244C

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION

The BD243B and BD243C are silicon

Epitaxial-Base NPN transistors mounted in Jedec

TO-220 plastic package.

They are inteded for use in medium power linear

and switching applications.

The complementary PNP types are BD244B and

BD244C respectively.

TO-220

INTERNAL SCHEMATIC DIAGRAM

Co (2)

C9(2)

(1)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

BD243B

BD243C

PNP

BD244B

BD244C

VCBO Collector-Base Voltage (IE = 0)

80

100

V

VCEO Collector-Emitter Voltage (IB = 0)

80

100

V

VEBO Emitter-Base Voltage (Ic = 0)

5

V

Ic Collector Current

6

A

ICM Collector Peak Current

10

A

IB Base Current

2

A

Plot Total Dissipation at Tc < 25 °C

65

W

Tstg Storage Temperature

Tj Max. Operating Junction Temperature

For PNP types voltage and current values are negative

-65 to 1 50

150

°C !

°c

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without

notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to

press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ

Semi-Conductors encourages customers to verify that datasheets are current before placing orders,

Quality Semi-Conductors

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