MMDF3N03HDR2 Ver la hoja de datos (PDF) - Motorola => Freescale

Número de pieza

componentes Descripción

Fabricante

MMDF3N03HDR2

TMOS Dual N-Channel Field Effect Transistors

Motorola => Freescale 

MMDF3N03HD

100

VGS = 20 V

SINGLE PULSE

10 TC = 25°C

10 µs

100 µs

1 ms

10 ms

1

dc

RDS(on) LIMIT

0.1

THERMAL LIMIT

PACKAGE LIMIT

Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”

thick single sided) with one die operating, 10s max.

0.01

0.1

1

10

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

350

ID = 9 A

300

250

200

150

100

50

0

25

50

75

100

125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 13. Maximum Avalanche Energy versus

Starting Junction Temperature

TYPICAL ELECTRICAL CHARACTERISTICS

10

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

1.0E–05

SINGLE PULSE

1.0E–04

Normalized to θja at 10s.

Chip 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω

0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient

1.0E–03

1.0E–02

1.0E–01

t, TIME (s)

1.0E+00

Figure 14. Thermal Response

1.0E+01

1.0E+02

1.0E+03

di/dt

IS

trr

ta

tb

TIME

tp

0.25 IS

IS

Figure 15. Diode Reverse Recovery Waveform

6

Motorola TMOS Power MOSFET Transistor Device Data

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