MMDF3N03HDR2 Ver la hoja de datos (PDF) - Motorola => Freescale

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MMDF3N03HDR2

TMOS Dual N-Channel Field Effect Transistors

Motorola => Freescale 

MMDF3N03HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

Vdc

30

—

—

—

34.5

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

1.0

—

—

10

—

—

100

nAdc

VGS(th)

Vdc

1.0

1.7

3.0

mV/°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

Ohms

—

0.06

0.07

—

0.065 0.075

2.0

3.6

Mhos

—

—

450

630

pF

—

160

225

—

35

70

—

12

24

ns

—

65

130

—

16

32

—

19

38

—

8

16

ns

—

15

30

—

30

60

—

23

46

—

11.5

16

nC

—

1.5

—

—

3.5

—

—

2.8

—

Vdc

—

0.82

1.2

—

0.7

—

Reverse Recovery Time

See Figure 12

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Storage Charge

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

trr

ta

tb

QRR

—

24

—

ns

—

17

—

—

7

—

—

0.025

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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