MMDF6N03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
30
IDSS
−
−
IGSS
−
VGS(th)
1.0
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
RDS(on)
−
−
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc,
VGS = 10 Vdc,
ID = 1.0 Adc,
RG = 6.0 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc,
VGS = 4.5 Vdc,
ID = 1.0 Adc,
RG = 6.0 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
(See Figure 8)
(VDS = 15 Vdc,
ID = 5.0 Adc,
VGS = 10 Vdc)
QT
−
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
trr
−
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Typ
−
−
−
−
−
28
42
9.0
430
217
67.5
8.2
8.48
89.6
61.1
11.8
51.3
47.2
62
15.7
2.0
4.6
3.86
0.77
0.65
54.5
14.8
39.7
0.048
Max
−
1.0
20
100
−
35
50
−
600
300
135
16.4
16.9
179
122
23
102
94.5
104
31.4
−
−
−
1.2
−
−
−
−
−
Unit
Vdc
μAdc
nAdc
Vdc
mΩ
Mhos
pF
ns
ns
nC
Vdc
ns
μC
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