MMDF3N02HDR2G Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
MMDF3N02HDR2G Datasheet PDF : 7 Pages
| |||
MMDF3N02HDR2G
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
TJ = 150 °C
10
TJ = 25 °C
0.08
0.06
0.04
ID = 7.1 A
www.VBsemi.tw
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.02
0.00
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.2
24
0.0
ID = 250 µA
18
- 0.2
12
- 0.4
6
- 0.6
- 50 - 25
2
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0.01
0.10
1.00
10.00
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
E-mail：China@VBsemi TEL:86-755-83251052
4
Share Link: 