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MRF587

The RF Line NPN Silicon High Frequency Transistor

M/A-COM Technology Solutions, Inc. 

MRF587

The RF Line NPN Silicon High Frequency Transistor

Noise Figure 3.0 dB@ 500MHz

Designed for use in high–gain, low–noise, ultra–linear, tuned and wide-

band amplifiers. Ideal for use in CATV, MATV, and instrumentation

applications.

 Low noise figure —

NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA

 High power gain —

GU(max) = 16.5 dB (typ.) @ f = 500 MHz

 Ion implanted

 All gold metal system

 High fT — 5.5 GHz

 Low intermodulation distortion:

TB3 = –70 dB

DIN = 125 dB V

 Nichrome emitter ballast resistors

Product Image

Rev. V1

CASE 244A–01, STYLE 1

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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https://www.macom.com/support

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