MSK3003(2000) Ver la hoja de datos (PDF) - M.S. Kennedy
Número de pieza
componentes Descripción
Fabricante
MSK3003 Datasheet PDF : 5 Pages
| |||
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
Drain to Source Voltage ○ ○ ○ ○ ○ 55V MAX
Drain to Gate Voltage
(R =1MΩ) 55V MAX GS
○
○
○
○
○
○
○
○
○
○
○
○
Gate to Source Voltage
(Continuous)
○
○
○
○
○
○
○
○
○
○ ±20V MAX
Continuous Current
○
○
○
○
○
○
○
○ 10A MAX
Pulsed Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 25A MAX
Thermal Resistance
(Junction to Case) ○ ○ ○ ○ ○ ○ ○ ○ ○ 7.9°C/W
ELECTRICAL SPECIFICATIONS
Single Pulse Avalanche Energy
(Q2,Q4,Q6) 71mJ ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
(Q1,Q3,Q5) 96mJ ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +175°C MAX
TST Storage Temperature ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +150°C
TC Case Operating Temperature Range -55°C to +125°C
TLD Lead Temperature Range
(10 Seconds) 300°C MAX ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Parameter
Test Conditions 4
Min.
MSK3003
Typ.
Max.
Units
Drain-Source Breakdown Voltage
VGS=0 ID=0.25mA (All Transistors)
55
-
-
V
Drain-Source Leakage Current
VDS=55V VGS=0V (Q2,Q4,Q6)
VDS=-55V VGS=0V (Q1,Q3,Q5)
-
-
25
µA
-
-
-25
µA
Gate-Source Leakage Current
VGS=±20V VDS=0 (All Transistors)
-
-
±100
nA
Gate-Source Threshold Voltage
VDS=VGS ID=250µA (Q2,Q4,Q6)
VDS=VGS ID=250µA (Q1,Q3,Q5)
2.0
-
4.5
V
-2.0
-
-4.5
V
Drain-Source On Resistance 2
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=-10V ID=-7.2A (Q1,Q3,Q5)
-
-
0.15
Ω
-
-
0.28
Ω
Drain-Source On Resistance 3
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=10V ID=-7.2A (Q1,Q3,Q5)
-
-
0.07
Ω
-
-
0.175
Ω
Forward Transconductance 1
VDS=25V ID=10A (Q2,Q4,Q6)
VDS=-25V ID=-7.2A (Q1,Q3,Q5)
4.5
-
2.5
-
-
S
-
S
N-Channel (Q2,Q4,Q6)
Total Gate Charge 1
ID=10A
-
-
20
nC
Gate-Source Charge 1
VDS=44V
-
-
5.3
nC
Gate-Drain Charge 1
VGS=10V
-
-
7.6
nC
Turn-On Delay Time 1
VDD=28V
-
4.9
-
nS
Rise Time 1
ID=10A
-
34
-
nS
Turn-Off Delay Time 1
RG=24Ω
-
19
-
nS
Fall Time 1
RD=2.6Ω
-
27
-
nS
Input Capacitance 1
VGS=0V
-
370
-
pF
Output Capacitance 1
VDS=25V
-
140
-
pF
Reverse Transfer Capacitance 1
f=1MHz
-
65
-
pF
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge 1
ID=-7.2A
-
-
19
nC
Gate-Source Charge 1
VDS=-44V
-
-
5.1
nC
Gate-Drain Charge 1
VGS=-10V
-
-
10
nC
Turn-On Delay Time 1
VDD=-28V
-
13
-
nS
Rise Time 1
ID=-7.2A
-
55
-
nS
Turn-Off Delay Time 1
RG=24Ω
-
23
-
nS
Fall Time 1
RD=3.7Ω
-
37
-
nS
Input Capacitance 1
VGS=0V
-
350
-
pF
Output Capacitance 1
VDS=-25V
-
170
-
pF
Reverse Transfer Capacitance 1
f=1MHz
-
92
-
pF
BODY DIODE
Forward On Voltage 1
IS=10A VGS=0V (Q2,Q4,Q6)
IS=-7.2A VGS=0V (Q1,Q3,Q5)
-
1.3
-
V
-
-1.6
-
V
Reverse Recovery Time 1
IS=10A di/dt=100A/µS (Q2,Q4,Q6)
IS=-7.2A di/dt=100A/µS (Q1,Q3,Q5)
-
56
83
nS
-
47
71
nS
Reverse Recovery Charge 1
IS=10A di/dt=100A/µS (Q2,Q4,Q6)
IS=-7.2A di/dt=100A/µS (Q1,Q3,Q5)
-
0.12
0.18
µC
-
0.084
0.13
µC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA=25°C unless otherwise specified.
2
Rev. G 6/00
Share Link: 