MURB1660CT Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

MURB1660CT

16.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Thinki Semiconductor Co., Ltd. 

MURB1620CT thru MURB1660CT

Pb Free Plating Product

Pb

MURB1620CT/MURB1630CT/MURB1640CT/MURB1660CT

16.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features

¬ Latest GPP EPI P/G Technology

¬ Good Soft Recovery Characteristics

¬ Ideally Suited for Automatic Assembly

¬ Low Forward Voltage

¬ High Surge Current Capability

¬ Low Leakage Current

D2PAK/TO-263

Unit : inch (mm)

Applications

¬ Freewheeling, Snubber, Clamp

¬ Inversion Welder

¬ PFC

¬ Plating Power Supply

¬ Ultrasonic Cleaner and Welder

¬ Converter & Chopper

¬ UPS/LED SMPS/HID

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CT"

Suffix "CTR"

Suffix "CTD" Suffix "CTS"

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

@TC = 100°C

Total Device

Per Diode

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

Forward Voltage per diode

@IF = 8.0A

Peak Reverse Current

At Rated DC Blocking Voltage

@TC = 25°C

@TC = 100°C

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Lead (Note 3)

Operating and Storage Temperature Range

Symbol

VRRM

VRWM

VR

VR(RMS)

IO

MURB1620CT MURB1630CT MURB1640CT MURB1660CT Unit

200

300

400

600

V

140

210

280

420

V

16.0

8.0

A

IFSM

150

A

V FM

IRM

trr

CJ

RθJA

RθJC

TJ, TSTG

0.98

70

1.3

5.0

100

35

50

30

1.5

-55 to +150

1.7

V

µA

nS

pF

°C/W

°C

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on PCB with minimum recommended pad sizes per diode.

Rev.08T

© 1995 Thinki Semiconductor Co., Ltd.

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http://www.thinkisemi.com.tw/

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