Diode Semiconductor Korea
1N60
FIG.1 -- FORWARD CURRENT VERSUS FORWARD
VOLTAGE (TYPICAL VALUES)
mA
100
90
IF 80
70
60
50
40
30
20
10
00
0.2
0.4
0.6
0.8 1.0V
VF
FIG.2 -- REVERSE CURRENT VERSUS
CONTINUOUS REVERSE VOLTAGE
A
1.40
1.20
IR 1.00
0.80
0.60
0.40
0.20
00
5
10 15 20
25 30 V
VR
FIG.3 -- JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
pF
4.0
3.5
3.0
CJ 2.5
2.0
1.5
1.0
0.5
00
1
2
3
4
VR
5
6V
FIG.4 -- DETECTION EFFICIENCY
MEASUREMENT CIRCUIT
D.U.T
Input:3VRMS
CL
10PF
output
RL
3.8KΩ
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