MSS50-1400 Ver la hoja de datos (PDF) - STMicroelectronics
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MSS50-1400 Datasheet PDF : 6 Pages
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MSS50
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
DC
AC
Rth (j-h) Contact (case to heatsink) (4)
(4) With contact grease utilisation
Value
0.75
0.45
0.05
GATE CHARACTERISTICS (maximum values)
PGM = 50 W (tp = 20 µs) PG (AV)= 1 W IFGM = 4 A (tp = 20 µs) VRGM = 5V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH
IT= 0.5A gate open
VTM
IDRM
IRRM
ITM= 100A tp= 380µs
VDRM Rated
VRRM Rated
tq
dV/dt *
IT= 100A VR=75V VD=67%VDRM
dI/dt=30A/µs dV/dt=20V/µs Gate open
Linear slope up to VD=67%VDRM
gate open
* For higher guaranteed values, please consult us.
Note : MSS50-1400
- IDRM and IRRM at Tj = 125°C is defined at 1200 V
- dV/dt at Tj = 125°C is defined at 67% of 1200 V
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
MAX
MAX
MIN
TYP
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
TYP
MAX
TYP
MAX
MAX
MAX
MAX
TYP
Tj=125°C MIN
Value
50
1.5
0.2
2
60
120
40
80
1.7
0.05
10
100
500
Unit
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
mA
µs
V/µs
2/6
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