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MPSA42 Datasheet PDF : 2 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MPSA42
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
TO-92
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
Rating Unit
300
V
300
V
6
V
500
mA
625
mW
+150
oC
-55 to +150 oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 300
Collector-Emitter Breakdown Voltage BVCEO 300
Emitter-Base Breakdown Volatge
BVEBO
6
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
Collector-Emitter Saturation Voltage(1) VBE(sat)
-
DC Current Gain(1)
hFE1
25
hFE2
40
hFE3
40
Transition Frequency
fT
50
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
0.1
-
0.1
-
0.5
-
0.9
-
-
-
-
-
-
-
-
-
3
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHz
VCB=20V, f=1MHz, IE=0
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