ZXM66P03N8 Ver la hoja de datos (PDF) - Diodes Incorporated.

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Fabricante

ZXM66P03N8

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXM66P03N8

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State

Resistance (1)

Forward Transconductance (1)(3)

DYNAMIC (3)

V(BR)DSS -30

IDSS

IGSS

VGS(th)

-1.0

RDS(on)

gfs

V

-1 µA

-100 nA

V

14.4

0.025 Ω

0.035 Ω

S

ID=-250µA, VGS=0V

VDS=-24V, VGS=0V

VGS=±20V, VDS=0V

IVDG=S-250µA, VDS=

VGS=-10V, ID=-5.6A

VGS=-4.5V, ID=-2.8A

VDS=-15V,ID=-5.6A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

1979

743

279

pF

VDS=-25 V, VGS=0V,

pF f=1MHz

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

td(on)

tr

td(off)

tf

Qg

Qg

Qgs

Qgd

7.6

16.3

94.6

39.6

36

62.5

4.9

19.6

ns

ns VDD =-15V, ID=-5.6A

ns RG=6.2Ω, VGS=-10V

ns

nC VDS=-15V,VGS=-5V

ID=-5.6A

nC

VDS=-15V,VGS=-10V

nC

nC ID=-5.6A

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

35

39.9

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

-0.95 V

ns

nC

Tj=25°C, IS=-5.6A,

VGS=0V

Tj=25°C, IF=-5.6A,

di/dt= 100A/µs

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - JANUARY 2006

3

SEMICONDUCTORS

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