ZXM66P03N8 Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

ZXM66P03N8

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXM66P03N8

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate- Source Voltage

Continuous Drain Current VGS=-10V; TA=25°C(b)

VGS=-10V; TA=70°C(b)

VGS=-10V; TA=25°C(a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode)(b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

-30

±20

-7.9

-6.3

-6.25

-28

-4.1

-28

1.56

12.5

2.5

20

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

RθJA

80

°C/W

Junction to Ambient (b)

RθJA

50

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature.

SEMICONDUCTORS

ISSUE 1 - JANUARY 2006

2

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