ZXMN6A07FTA Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

ZXMN6A07FTA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current VGS = 10V

Pulsed Drain Current (Note 8)

TA = +25°C

TA = +70°C

TA = +25°C

Continuous Source Current (Body Diode) (Note 7)

Pulsed Source Current (Body Diode) (Note 8)

(Note 7)

(Note 7)

(Note 6)

Symbol

VDSS

VGS

ID

IDM

IS

ISM

ZXMN6A07F

Value

60

±20

1.4

1.1

1.2

6.9

1

6.9

Units

V

V

A

A

A

A

Thermal Characteristics

Characteristic

Power Dissipation (Note 6)

Linear Derating Factor

Power Dissipation (Note 7)

Linear Derating Factor

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Ambient (Note 9)

Operating and Storage Temperature Range

(Note 6)

(Note 7)

Symbol

PD

PD

RθJA

RθJL

TJ, TSTG

Value

625

5

806

6.4

200

155

194

-55 to +150

Notes:

6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

7. For a device surface mounted on FR4 PCB measured at t ≤5 secs.

8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs - pulse current limited by maximum junction temperate.

9. Thermal resistance from junction to solder-point (at the end of the drain lead).

Unit

mW

mW/°C

mW

mW/°C

°C/W

°C

ZXMN6A07F

Document Number DS33547 Rev. 9 - 2

2 of 8

www.diodes.com

July 2015

© Diodes Incorporated

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