ZXMN6A08E6TA(2010) Ver la hoja de datos (PDF) - Diodes Incorporated.
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ZXMN6A08E6TA Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXMN6A08E6
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Symbol Min
BVDSS
60
IDSS
⎯
IGSS
⎯
VGS(th)
1.0
RDS (ON)
⎯
gfs
⎯
VSD
⎯
trr
⎯
Qrr
⎯
Ciss
⎯
Coss
⎯
Crss
⎯
Qg
⎯
Qg
⎯
Qgs
⎯
Qgd
⎯
tD(on)
⎯
tr
⎯
tD(off)
⎯
tf
⎯
Typ
⎯
⎯
⎯
⎯
0.067
0.100
6.6
0.88
19.2
30.3
459
44.2
24.1
3.7
5.8
1.4
1.9
2.6
2.1
12.3
4.6
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
Max
⎯
0.5
±100
⎯
0.080
0.150
⎯
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V ID = 250μA, VGS = 0V
μA VDS = 60V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
ID = 250μA, VDS = VGS
Ω
VGS = 10V, ID = 4.8A
VGS = 4.5V, ID = 4.2A
S VDS = 15V, ID = 4.8A
V IS = 4A, VGS = 0V, TJ = 25°C
ns IF = 1.4A, di/dt = 100A/μs,
nC TJ = 25°C
pF
pF
VDS = 40V, VGS = 0V
f = 1MHz
pF
nC VGS = 4.5V
nC
nC VGS = 10V
nC
VDS = 30V
ID = 1.4A
ns
ns VDD = 30V, VGS = 10V
ns ID = 1.5A, RG ≅ 6.0Ω
ns
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
4 of 8
www.diodes.com
August 2010
© Diodes Incorporated
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