ZXMN6A08E6TA(2010) Ver la hoja de datos (PDF) - Diodes Incorporated.
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ZXMN6A08E6TA Datasheet PDF : 8 Pages
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A Product Line of
Diodes Incorporated
ZXMN6A08E6
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source voltage
VDSS
60
V
Gate-Source voltage
(Note 3)
VGS
±20
V
3.5
Continuous Drain current
VGS = 10V TA = 70°C (Note 3)
ID
2.8
A
(Note 2)
2.8
Pulsed Drain current
VGS= 10V
(Note 4)
IDM
16
A
Continuous Source current (Body diode)
(Note 3)
IS
2.6
A
Pulsed Source current (Body diode)
(Note 4)
ISM
16
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Power dissipation
Linear derating factor
Characteristic
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 1)
(Note 3)
Symbol
PD
RθJA
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
73
-55 to 150
Unit
W
mW/°C
°C/W
°C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
2 of 8
www.diodes.com
August 2010
© Diodes Incorporated
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