2N60-TN3-R Ver la hoja de datos (PDF) - Unspecified
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2N60-TN3-R Datasheet PDF : 7 Pages
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2N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Switching Characteristics
Turn-On Delay Time
Rise Time
tD (ON)
tR
VDD =300V, ID =2.4A, RG=25Ω
(Note 1,2)
Turn-Off Delay Time
tD(OFF)
Fall Time
tF
Total Gate Charge
Gate-Source Charge
QG
VDS=480V, VGS=10V, ID=2.4A
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR
VGS = 0 V, ISD = 2.4A,
QRR
di/dt = 100 A/µs (Note1)
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
10
30
ns
25
60
ns
20
50
ns
25
60
ns
9.0
11
nC
1.6
nC
4.3
nC
1.4
V
2.0
A
8.0
A
180
ns
0.72
µC
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