2N60F Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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Fabricante
2N60F Datasheet PDF : 8 Pages
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SEMICONDUCTOR
2N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS
Gate to Source voltage
ID
Continous Drain Current
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
IAR=2A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy (Note 2)
IAS=2A, L = 64mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-251/ TO-252
PD
Total power dissipation
TC=25°C TO-220AB
TO-220F
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
UNIT
600
600
V
±30
2
1.24
A
8
2
4.5
mJ
140
4.5
V /ns
44
54
W
23
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.IAS = 2A, VDD = 50V, L = 64mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-251/ TO-252
TO-220AB
TO-220F
TO-251/TO-252
TO-220AB
TO-220F
Min.
Typ.
Max.
2.9
2.35
5.5
100
62.5
62.5
UNIT
ºC/W
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