2N60F Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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2N60F Datasheet PDF : 8 Pages
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SEMICONDUCTOR
2N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(2A, 600Volts)
DESCRIPTION
The Nell 2N60 is a three-terminal silicon
device with current conduction capability
of 2A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 5.0Ω@VGS = 10V
Ultra low gate charge(11nC max.)
Low reverse transfer capacitance
(CRSS = 5pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
D
S
TO-251 (I-PAK)
(2N60F)
D
D
G
S
TO-252 (D-PAK)
(2N60G)
G
DS
TO-220AB
(2N60A)
GDS
TO-220F
(2N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
2
600
5.0 @ VGS = 10V
11
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
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