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BS250FTA Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd

Número de pieza
componentes Descripción
Fabricante
BS250FTA
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
BS250FTA Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BS250FTA
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
10
VGS = 0 V
8
100
6
TJ = 125 °C
www.VBsemi.tw
ID = 500 mA
10
TJ = 25 °C
TJ = - 55 °C
1
0.00
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.4
ID = 250 µA
0.3
0.2
0.1
- 0.0
- 0.1
- 0.2
- 0.3
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Threshold Voltage Variance Over Temperature
2
1
Duty Cycle = 0.5
4
ID = 200 mA
2
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
3
2.5
2
1.5
1
TA = 25 °C
0.5
0
0.01
0.1
1
10
Time (s)
100
600
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 350 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
E-mail:China@VBsemi TEL:86-755-83251052
4

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