D45C2 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

D45C2

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

D45C2

DESCRIPTION

·Low Saturation Voltage

·Good Linearity of hFE

·Fast Switching Speeds

·Complement to Type D44C2

APPLICATIONS

·Designed for various specific and general purpose application

such as: output and driver stages of amplifiers operating at

frequencies from DC to greater than 1.0MHz series, shunt

and switching regulators; low and high frequency inverters/

converters and many others.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCES Collector-Emitter Voltage

-40

V

VCEO Collector-Emitter Voltage

-30

V

VEBO Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

-6

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

-1

A

30

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance, Junction to Case

4.2 ℃/W

isc website：www.iscsemi.cn

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