2SD880 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD880 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
Switching times
VEB=7V; IC=0
IC=0.5A ; VCE=5V
IC=0.5A ; VCE=5V;f=1MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10IB1=-10IB2=2A
VCC=30V
PW=30μs
hFE Classifications
O
Y
GR
60-120 100-200 150-300
Product Specification
2SD880
MIN TYP. MAX UNIT
60
V
7
V
1.0
V
1.0
V
100 μA
100 μA
60
300
3
MHz
1.2 μs
2.0 μs
1.1 μs
2
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