2SB1189-R Ver la hoja de datos (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Número de pieza

componentes Descripción

Fabricante

2SB1189-R

PNP Transistors

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

■PNP Transistors

2SB1189 SOT-89

■ Features

● High breakdown voltage, BVCEO=-80V,

and High Current, IC=-0.7A

● Complementary to 2SD1767

3

2

1

1.Base

2.Collector

3.Emitter

■ Simplified outline(SOT-89)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Symbol

Rating

Unit

VCBO

-80

VCEO

-80

V

VEBO

-5

IC

-0.7

A

0.5

PC

W

2

TJ

150

℃

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 μA， IE=0

VCEO Ic= -2 mA, IB=0

VEBO IE= -100μA， IC=0

ICBO VCB= -60V , IE=0

IEBO VEB= -4V , IC=0

VCE(sat) IC=-500 mA, IB=-50mA

VBE(sat) IC=-500 mA, IB=-50mA

hFE VCE= -3V, IC= -100 mA

Cob VCB= -10V, IE= 0,f=1MHz

fT

VCE= -5V, IE = 50mA,f=100MHz

■ Classification of hfe

Type

Range

Marking

2SB1189-Q

120-270

BD Q*

2SB1189-R

180-390

BD R*

Min Typ Max Unit

-80

-80

V

-5

-0.5

uA

-0.5

-0.2 -0.4

V

-1.2

120

390

14 20 pF

100

MHz

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Dongguan YFW Electronics Co, Ltd.

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