BFR92W(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFR92W
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR92W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 15 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

fT

3.5

5

-

Ccb

- 0.43 0.6

Cce

- 0.25 -

Ceb

-

0.7

-

F

IC = 2 mA, VCE = 6 V, ZS = ZSopt ,

f = 900 MHz

-

1.8

-

f = 1.8 GHz

-

2.9

-

Power gain, maximum available 1)

Gma

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

- 15.5 -

f = 1.8 GHz

-

10

-

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

|S21e|2

-

13

-

f = 1.8 GHz

-

7.5

-

Unit

GHz

pF

dB

1Gma = |S21 / S12| (k-(k2-1)1/2)

3

Aug-03-2001

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