BFS481 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFS481

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFS481

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 83 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

Value

12

20

20

2

20

2

175

150

-55 ... 150

Unit

V

mA

mW

°C

Thermal Resistance

Parameter

Junction - soldering point2)

Symbol

RthJS

Value

Unit

380

K/W

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 1 V, IC = 0

DC current gain

IC = 5 mA, VCE = 8 V, pulse measured

V(BR)CEO 12

-

-V

ICES

-

- 100 µA

ICBO

-

- 100 nA

IEBO

-

-

1 µA

hFE

70 100 140 -

1TS is measured on the collector lead at the soldering point of the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

2

2013-06-18

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