DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BFP182 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
BFP182
Infineon
Infineon Technologies Infineon
BFP182 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BFP182
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz
fT
6
8
-
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
- 0.25 0.4
Unit
GHz
pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
-
0.3
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
0.8
-
Noise figure
IC = 3 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
F
dB
-
0.9
-
-
1.3
-
Power gain, maximum stable1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gms
-
22
- dB
Power gain, maximum available2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gma
- 16.5 - dB
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 1.8 GHz
|S21e|2
dB
-
18
-
-
12
-
1Gms = |S21 / S12|
2Gma = |S21e / S12e| (k-(k²-1)1/2)
2007-04-20
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]