BFP182 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFP182

NPN Silicon RF Transistor*

Infineon Technologies 

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

• fT = 8 GHz, F = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

BFP182

3

4

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP182

Marking

Pin Configuration

RGs 1=C 2=E 3=B 4 = E -

-

Package

SOT143

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation2)

TS ≤ 69 °C

Junction temperature

Ambient temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

Thermal Resistance

Parameter

Symbol

Junction - soldering point3)

RthJS

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

3For calculation of RthJA please refer to Application Note Thermal Resistance

Value

12

20

20

2

35

4

250

150

-65 ... 150

-65 ... 150

Value

≤ 325

Unit

V

mA

mW

°C

Unit

K/W

2007-04-20

1

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