ES3J Ver la hoja de datos (PDF) - Zibo Seno Electronic Engineering Co.,Ltd

Número de pieza

componentes Descripción

Fabricante

ES3J

3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Zibo Seno Electronic Engineering Co.,Ltd 

Z ibo Seno Electronic Engineering Co., Ltd.

ES3A – ES3J

4.0

Tj = 25°C

10

Pulse width = 300µs

3.0

ES3A - ES3D

ES3E - ES3G

1.0

2.0

ES3J

0.1

1.0

25

120

100

50

75 100 125 150 175

TT, TERMINAL TEMPERATURE (°C)

Fi . 1 Forward Current Deratin Curve

Single Half-Sine-Wave

(JEDEC Method)

80

60

40

20

0

1

10

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Surge Current Derating Curve

50Ω NI (Non-inductive)

10Ω NI

(+)

50V DC

Approx

(-)

Device

Under

Test

1.0Ω

NI

Oscilloscope

(Note 1)

(-)

Pulse

Generator

(Note 2)

(+)

0.01

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

100

Tj = 25°C

f = 1.0MHz

10

1

1

+0.5A

10

100

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

trr

0A

-0.25A

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

ES3A – ES3J

2 of 2

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