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HMC8142

81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector

Analog Devices 

Data Sheet

81 GHz to 86 GHz, E-Band Power Amplifier

With Power Detector

HMC8142

FEATURES

GENERAL DESCRIPTION

Gain: 21 dB typical

Output power for 1 dB compression (P1dB): 25 dBm typical

Saturated output power (PSAT): 26 dBm typical

Output third-order intercept (OIP3): 29 dBm typical

Input return loss: 12 dB typical

Output return loss: 8 dB typical

DC supply: 4 V at 450 mA

No external matching required

Die size: 3.039 mm × 1.999 mm × 0.05 mm

APPLICATIONS

E-band communication systems

High capacity wireless backhaul radio systems

Test and measurement

The HMC8142 is an integrated E-band gallium arsenide (GaAs),

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC), medium power

amplifier with a temperature compensated on-chip power detector

that operates from 81 GHz to 86 GHz. The HMC8142 provides

21 dB of gain, 25 dBm of output power at 1 dB compression,

29 dBm of output third-order intercept, and 26 dBm of saturated

output power at 20% power added efficiency (PAE) from a 4 V

power supply. The HMC8142 exhibits excellent linearity and is opti-

mized for E-band communications and high capacity wireless

backhaul radio systems. The amplifier configuration and high gain

make it an excellent candidate for last stage signal amplification

before the antenna. All data is taken with the chip in a 50 Ω test

fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long

ribbon on each port.

FUNCTIONAL BLOCK DIAGRAM

4

5

6

7

VDD1

VDD2

8

9

VDD3

10

11

VDD4

3

RFIN

2

1

HMC8142

12

RFOUT

13

14

VGG1

VGG2

25

24

23

22

VGG3

21

20

19

Figure 1.

VGG4

18

VREF

17

16

VDET

15

Rev. A

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