HMC8142 Ver la hoja de datos (PDF) - Analog Devices

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HMC8142

81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector

Analog Devices 

Data Sheet

HMC8142

MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS

Attach the die directly to the ground plane eutectically or with

Transients

conductive epoxy.

Suppress instrument and bias supply transients while bias is

To bring RF to and from the chip, use 50 Ω microstrip trans-

mission lines on 0.127 mm (5 mil) thick alumina thin film

applied. To minimize inductive pickup, use shielded signal and

bias cables.

substrates (see Figure 42).

General Handling

0.05mm (0.002") THICK GaAs MMIC

0.076mm

(0.003")

RIBBON BOND

Handle the chip on the edges only using a vacuum collet or with

a sharp pair of bent tweezers. Because the surface of the chip

has fragile air bridges, never touch the surface of the chip with a

vacuum collet, tweezers, or fingers.

MOUNTING

RF GROUND PLANE

The chip is back metallized and can be die mounted with gold/tin

(AuSn) eutectic preforms or with electrically conductive epoxy.

The mounting surface must be clean and flat.

0.127mm (0.005") THICK ALUMINA

THIN FILM SUBSTRATE

Figure 42. Routing RF Signals

To minimize bond wire length, place microstrip substrates as

close to the die as possible. The typical die to substrate spacing

is 0.076 mm to 0.152 mm (3 mil to 6 mil).

HANDLING PRECAUTIONS

To avoid permanent damage, adhere to the precautions in the

following sections.

Storage

All bare die ship in either waffle or gel-based ESD protective

containers, sealed in an ESD protective bag. After opening the

sealed ESD protective bag, all die must be stored in a dry

nitrogen environment.

Cleanliness

Handle the chips in a clean environment. Never use liquid

cleaning systems to clean the chip.

Static Sensitivity

Follow ESD precautions to protect against ESD strikes.

Eutectic Die Attach

It is best to use an 80% gold/20% tin preform with a work

surface temperature of 255°C and a tool temperature of 265°C.

When hot 90% nitrogen/10% hydrogen gas is applied, maintain

tool tip temperature at 290°C. Do not expose the chip to a

temperature greater than 320°C for more than 20 sec. No more

than 3 sec of scrubbing is required for attachment.

Epoxy Die Attach

ABLETHERM 2600BT is recommended for die attachment.

Apply a minimum amount of epoxy to the mounting surface so

that a thin epoxy fillet is observed around the perimeter of the

chip after placing it into position. Cure the epoxy per the schedule

provided by the manufacturer.

WIRE BONDING

RF bonds made with 3 mil × 0.5 mil gold ribbon are recom-

mended for the RF ports. These bonds must be thermosonically

bonded with a force of 40 g to 60 g. DC bonds of 1 mil

(0.025 mm) diameter, thermosonically bonded, are recommended.

Create ball bonds with a force of 40 g to 50 g and wedge bonds

with a force of 18 g to 22 g. Create all bonds with a nominal

stage temperature of 150°C. Apply a minimum amount of

ultrasonic energy to achieve reliable bonds. Keep all bonds as

short as possible, less than 12 mil (0.31 mm).

Rev. A | Page 15 of 16

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