High Reliability Reflective
Object Sensor
OPB700TX, OPB700TXV
Absolute Maximum Ra ngs (TA=25°C unless otherwise noted)
Storage Temperature Range
Opera ng Temperature Range
Lead Soldering Temperature
Input Diode
Forward DC Current
Reverse Voltage
Power Dissipa on(1)
Output Phototransistor
Collector‐Emi er Voltage
Emi er‐Collector Voltage
Power Dissipa on(1)
‐65° C to + 150° C
‐65° C to + 125° C
260° C
50 mA
2V
100 mW
50 V
7V
100 mW
Electrical Characteris cs (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
VF
Forward Voltage(6)
IR
Reverse Current
Output Phototransistor
1.1 1.6 1.8
1.3 1.8 2.0
0.9 1.4 1.7
‐ 0.1 100
IF = 50 mA
V IF = 50 mA, TA = ‐55° C
IF = 50 mA, TA = 100° C
µA VR = 2 V
V(BR)CEO
V(BR)ECO
Collector‐Emi er Breakdown Voltage
Emi er‐Collector Breakdown Voltage
IC(OFF) Collector‐Emi er Dark Current
50 110 ‐
7 10
‐
‐
‐
100
‐ 10 100
V IC = 1 mA, IF = 0
V IE = 100 µA, IF = 0
nA VCE = 10 V, IF = 0
µA VCE = 10 V, IF = 0, TA = 100° C
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 08/2016 Page 2