BT136S-600D Ver la hoja de datos (PDF) - WeEn Semiconductors
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BT136S-600D Datasheet PDF : 13 Pages
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WeEn Semiconductors
BT136S-600D
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms;
Fig. 4; Fig. 5
tp = 10 ms; SIN
IG = 20 mA
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
5
IT(RMS)
(A)
4
3
2
1
003aae828
12
IT(RMS)
(A)
10
8
6
4
2
Min Max Unit
-
600 V
-
4
A
-
25
A
-
27
A
-
3.1 A²s
-
50
A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
003aae830
0
- 50
0
50
100
150
Tmb (°C)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz
Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT136S-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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