DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BT136S-600D Ver la hoja de datos (PDF) - WeEn Semiconductors

Número de pieza
componentes Descripción
Fabricante
BT136S-600D
WEEN
WeEn Semiconductors WEEN
BT136S-600D Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BT136S-600D
4Q Triac
15 September 2018
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable
plastic package intended for use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series
D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
2. Features and benefits
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
3. Applications
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms; Fig. 4; Fig. 5
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
4
A
-
-
25
A
-
-
27
A
-
-
125 °C
-
2
5
mA
-
2.5 5
mA

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]