DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Z0107NA0 Ver la hoja de datos (PDF) - WeEn Semiconductors

Número de pieza
componentes Descripción
Fabricante
Z0107NA0
WEEN
WeEn Semiconductors WEEN
Z0107NA0 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Z0107NA0
4Q Triac
17 September 2018
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package
intended for use in applications requiring enhanced noise immunity and direct interfacing to logic
ICs and low power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Very sensitive gate
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
800 V
-
-
1
A
-
-
12.5 A
-
-
13.8 A
-
-
125 °C
0.3 -
5
mA
0.3 -
5
mA

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]