Z0103NA0 Ver la hoja de datos (PDF) - WeEn Semiconductors
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Z0103NA0 Datasheet PDF : 14 Pages
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WeEn Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
rate of change of
commutating voltage
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 1 A; Tj = 25 °C; Fig. 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 800 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
VD = 800 V; Tj = 125 °C
VDM = 536 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; gate open circuit
Z0103NA0
4Q Triac
Min Typ Max Unit
0.2 -
3
mA
0.2 -
3
mA
0.2 -
3
mA
0.2 -
5
mA
-
-
7
mA
-
-
20
mA
-
-
7
mA
-
-
7
mA
-
-
7
mA
-
1.3 1.6 V
-
-
1
V
0.2 -
-
V
-
-
0.5 mA
80
-
-
V/µs
0.5 -
-
V/µs
Z0103NA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
06 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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