PMPB20EN Ver la hoja de datos (PDF) - Nexperia B.V. All rights reserved
Número de pieza
componentes Descripción
Fabricante
PMPB20EN Datasheet PDF : 15 Pages
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Nexperia
PMPB20EN
30 V, N-channel Trench MOSFET
25
ID
(A)
20
3.5 V
VGS = 10 V
15
10
5
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3.2 V
3.0 V
2.9 V
2.7 V
2.6 V
2.5 V
10-2
ID
(A)
10-3
10-4
10-5
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min
typ max
0
0
1
2
3
4
VDS (V)
Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0.0
0.5
1.0
1.5
2.0
2.5
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
0.10
RDSon
(Ω)
0.08
2.5 V
VGS = 2.75 V
3.0 V
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3.25 V
0.10
RDSon
(Ω)
0.08
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0.06
0.06
0.04
0.04
3.5 V 3.75 V
Tj = 150 °C
0.02
4.5 V
10 V
0.02
Tj = 25 °C
0.00
0
5
10
15
20
25
ID (A)
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0.00
0
2
4
6
8
10
VGS (V)
ID = 8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB20EN
Product data sheet
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12 July 2018
© Nexperia B.V. 2018. All rights reserved
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