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MRFE6VP61K25HSR6 Datasheet PDF : 21 Pages
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Freescale Semiconductor
Technical Data
Document Number: MRFE6VP61K25H
Rev. 2, 5/2012
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type
Pout
f
Gps
ηD
(W)
(MHz)
(dB)
(%)
Pulse
1250 Peak
230
(100 μsec, 20% Duty Cycle)
24.0
74.0
CW
1250 CW
230
22.9
74.6
MRFE6VP61K25HR6
MRFE6VP61K25HSR6
1.8--600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Application Circuits (1) — Typical Performance
Frequency
Pout
Gps
ηD
(MHz)
Signal Type
(W)
(dB)
(%)
27
CW
1300
27
81
40
CW
1300
26
85
81.36
CW
1250
27
84
87.5--108
CW
1100
24
80
144--148
CW
1250
26
78
170--230
DVBT
225
25
30
352
Pulse
1250
21.5
66
(200 μsec,
20% Duty Cycle)
352
CW
1150
20.5
68
500
CW
1000
18
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pout
Test
(W)
Voltage Result
230
Pulse
>65:1 at all 1500 Peak 50
No Device
(100 μsec, 20% Phase Angles (3 dB
Degradation
Duty Cycle)
Overdrive)
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For
R5 Tape and Reel options, see p. 20.
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP61K25HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP61K25HSR6
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2010--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
1
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