MRFG35010A Ver la hoja de datos (PDF) - Freescale Semiconductor

Número de pieza

componentes Descripción

Fabricante

MRFG35010A

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor 

Zo = 25 Ω

Zload

f = 3550 MHz

Zsource

f = 3550 MHz

VDD = 12 Vdc, IDQ = 140 mA, Pout = 1 W Avg.

f

MHz

Zsource

W

Zload

W

3550

4.6 - j18.7

4.9 - j9.8

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 7. Series Equivalent Source and Load Impedance

RF Device Data

Freescale Semiconductor

MRFG35010AR1

7

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