ATC100B0R2BT500XT Ver la hoja de datos (PDF) - Freescale Semiconductor

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ATC100B0R2BT500XT

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth

Video Bandwidth @ 170 W PEP Pout where IM3 = - 30 dBc

(Tone Spacing from 100 kHz to VBW)

VBW

—

25

—

ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both

sidebands)

Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 170 W CW

Average Group Delay @ Pout = 170 W CW, f = 2140 MHz

Part - to - Part Insertion Phase Variation @ Pout = 170 W CW

f = 2140 MHz, Six Sigma Window

GF

—

0.4

—

Φ

—

1.95

—

Delay

—

1.7

—

ΔΦ

—

18

—

Gain Variation over Temperature

( - 30°C to +85°C)

ΔG

—

0.015

—

Output Power Variation over Temperature

( - 30°C to +85°C)

ΔP1dB

—

0.01

—

Unit

MHz

dB

°

ns

°

dB/°C

dBm/°C

RF Device Data

Freescale Semiconductor

MRF7S21170HR3 MRF7S21170HSR3

3

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