C5750X5R1H106MT Ver la hoja de datos (PDF) - Freescale Semiconductor

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C5750X5R1H106MT

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1A (Minimum)

Machine Model (per EIA/JESD22 - A115)

B (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

IDSS

—

IGSS

—

—

10

μAdc

—

1

μAdc

—

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 372 μAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 1400 mAdc)

Fixture Gate Quiescent Voltage (1)

(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 3.72 Adc)

Dynamic Characteristics (2)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

1.2

2

2.7

Vdc

VGS(Q)

—

2.7

—

Vdc

VGG(Q)

4.5

5.4

6.5

Vdc

VDS(on)

0.1

0.15

0.3

Vdc

Crss

—

0.9

—

pF

Coss

—

703

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 2112.5 MHz and

f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

15

16

18

dB

Drain Efficiency

ηD

29

31

—

%

Output Peak - to - Average Ratio @ 0.01% Probability on CCDF

PAR

5.7

6.1

—

dB

Adjacent Channel Power Ratio

ACPR

—

- 37

- 35

dBc

Input Return Loss

IRL

—

- 15

-9

dB

1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

(continued)

MRF7S21170HR3 MRF7S21170HSR3

2

RF Device Data

Freescale Semiconductor

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