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BT138Y-600E Ver la hoja de datos (PDF) - WeEn Semiconductors

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Fabricante
BT138Y-600E
WEEN
WeEn Semiconductors WEEN
BT138Y-600E Datasheet PDF : 13 Pages
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BT138Y-600E
4Q Triac
15 September 2018
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D (TO-220AB)
plastic package intended for use in general purpose bidirectional switching and phase control
applications. This sensitive gate "series E" triac can be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits. The internally insulated mounting base
gives good thermal performance combined with ease of handling and assembly by the user.
2. Features and benefits
2500 V RMS isolation voltage capability
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Industry standard TO-220 package for ease of handling
Isolated mounting base
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
230 V lamp dimmers
General purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 85 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
12
A
-
-
95
A
-
-
105 A
-
-
125 °C
-
-
10
mA

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