DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPG155TB_ Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
UPG155TB_
NEC
NEC => Renesas Technology NEC
UPG155TB_ Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TYPICAL CHARACTERISTICS (OFF)
TEST CONDITIONS: VCONT1 = VCONT2 = 3 V/3 V, Pin = 0 dBm, TA = +25°C
OUT1
IN
OUT2
50
µPG155TB
IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY
CH1 S11 log MAG
MARKER 1
1 GHz
0
1
–10
–20
10 dB/REF 0 dB
1: –11.777 dB
1 GHz
2: –11.405 dB
1.5 GHz
3: –11.344 dB
2 GHz
4: –10.281 dB
2.5 GHz
2
3
4
–30
–40
START 0.300 000 000 GHz STOP 3.300 000 000 GHz
Frequency f (GHz)
IN-OUT1 INSERTION LOSS vs. FREQUENCY
CH1 S21 log MAG
MARKER 1
1 GHz
0
1
10 dB/REF 0 dB
1: –4.392 dB
1 GHz
2: –4.417 dB
1.5 GHz
3: –4.447 dB
2 GHz
4: –4.594 dB
2.5 GHz
–10
2
3
4
–20
–30
–40
IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY
CH1 S22 log MAG
MARKER 1
1 GHz
0
–10
1
–20
10 dB/REF 0 dB
1: –14.144 dB
1 GHz
2: –13.091 dB
1.5 GHz
3: –12.966 dB
2 GHz
4: –14.503 dB
2.5 GHz
2
3
4
–30
–40
START 0.300 000 000 GHz STOP 3.300 000 000 GHz
Frequency f (GHz)
START 0.300 000 000 GHz STOP 3.300 000 000 GHz
Frequency f (GHz)
Caution This data is including loss of the test fixture.
Data Sheet P13654EJ2V0DS00
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]