RJK5026DPP-E0 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
RJK5026DPP-E0 Datasheet PDF : 7 Pages
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RJK5026DPP-E0
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
VGS = 0
f = 1 MHz
1
0
50
Ta = 25°C
100 150
Crss
200 250
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
10
VGS = 0 V
Ta = 25 °C
8
Pulse Test
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
Dynamic Input Characteristics (Typical)
800
ID = 6 A
Ta = 25 °C
VGS
16
600
VDD = 400 V
12
250 V
400 VDS
100 V
8
200
4
VDD = 400 V
250 V
100 V
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
VDS = 10 V
4
3 ID = 10 mA
1 mA
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0608EJ0100 Rev.1.00
Jun 21, 2012
Page 4 of 6
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