RJK5026DPP-E0 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
RJK5026DPP-E0 Datasheet PDF : 7 Pages
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RJK5026DPP-E0
Main Characteristics
Maximum Safe Operation Area
100
10
PW
10 μs
1
= 100 μs
0.1
0.01
Operation in this
area is limited by
RDS(on)
Ta = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
Tc = −25 °C
25 °C
6
75 °C
4
2
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
5
VGS = 10 V
Pulse Test
4
3
ID = 6 A
2
1.5 A
3A
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0608EJ0100 Rev.1.00
Jun 21, 2012
Preliminary
Typical Output Characteristics
10
Ta = 25°C
Pulse Test
8
6
7 V, 8 V, 10 V
6V
5.8 V
5.6 V
4
5.4 V
5.2 V
2
VGS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
1
2
5
10
Drain Current ID (A)
1000
Body-Drain Diode Reverse
Recovery Time (Typical)
100
10
0.1
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
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