RJK5026DPP-E0 Ver la hoja de datos (PDF) - Renesas Electronics
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RJK5026DPP-E0 Datasheet PDF : 7 Pages
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RJK5026DPP-E0
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
500
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
3.0
Static drain to source on state
resistance
RDS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
VDF
—
Body-drain diode reverse recovery time
trr
—
Notes: 5. Pulse test
Typ
—
—
—
—
1.35
440
52
7
26
19
50
14
14
2.5
6.9
0.95
230
Preliminary
Max
—
1
±0.1
4.5
1.70
Unit
V
A
A
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 3 A, VGS = 10 V Note5
—
—
—
—
—
—
—
—
—
—
1.50
—
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 3 A
ns VGS = 10 V
ns RL = 83.3
ns Rg = 10
nC VDD = 400 V
nC VGS = 10 V
nC ID = 6 A
V IF = 6 A, VGS = 0 Note5
ns IF = 6 A, VGS = 0
diF/dt = 100 A/s
R07DS0608EJ0100 Rev.1.00
Jun 21, 2012
Page 2 of 6
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