RJK5026DPP-E0 Ver la hoja de datos (PDF) - Renesas Electronics
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RJK5026DPP-E0 Datasheet PDF : 7 Pages
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RJK5026DPP-E0
500V - 6A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0608EJ0100
Rev.1.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
500
30
6
18
6
18
4
0.88
28.5
4.38
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0608EJ0100 Rev.1.00
Jun 21, 2012
Page 1 of 6
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