RJK5026DPP-E0-T2 Ver la hoja de datos (PDF) - Renesas Electronics
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RJK5026DPP-E0-T2 Datasheet PDF : 7 Pages
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RJK5026DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
IDNote4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0360EJ0200
(Previous: REJ03G1734-0100)
Rev.2.00
Apr 15, 2011
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
6
18
6
18
4
0.88
28.5
4.38
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0360EJ0200 Rev.2.00
Apr 15, 2011
Page 1 of 6
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